將So l2Gel 法制備的摻鈣鈦酸鑭鉛納米粉粒(PCL T) 與聚偏氟乙烯2三氟乙烯(P (VDF2T rFE) 均勻復合, 作為熱釋電傳感器的敏感膜, 比同樣制備條件的純聚偏氟乙烯2三氟乙烯膜的探測優值高約2214%。并以沉積有35 nm ITO 薄膜的廉價PET 塑料為襯底, 用旋轉涂膜法沉積PCL T?P (VDF2T rFE) 復合敏感膜, 用N i2Cr 薄膜作上電極, 制備了PCL T?P (VDF2T rFE)?P ET 熱釋電傳感器。PET 塑料可有效降低熱釋電元件的熱導, 下電極ITO 可反射紅外輻射, 明顯提高了傳感器的電壓響應和降低熱釋電元件的熱噪聲。測試結果表明, PCL T?P (VDF2T rFE)?PET 熱釋電傳感器的探測率達到314×107cmHz1?2 W - 1, 比同樣制備條件的體硅襯底傳感器高2 個數量級以上。
關鍵詞: 熱釋電傳感器; 塑料薄膜襯底; 復合敏感膜; PCL T?P (VDF2T rFE)
　　Abstract:N ano sized lead t itanate doped w ith calcium and lanthanum (PCL T) pow der obtained by the So l2Gel method w as homogeneouslym ixed w ith vinylidene fluo ride2t rifluo roethylene [P (VDF2T rFE) ]. The nanocompo site PCL T?P (VDF2T rFE) film w as used as the sensing film of pyro lect ric senso rs,w ho se detect ive merit w as about 22. 4% h igher than that of senso rs using pure P (VDF2T rFE). 35 nm ITO film w as depo sited as bo t tom elect rode on PET p last ic film subst rate, on w h ich PCL T?P (VDF2T rFE)w as p repared by sp in2coat ing, and N i2Cr film w as cho sen as upper elect rode. PET p last ic film subst rate could effect ively decrease the thermal conduct ivity of the ele2 ment and ITO bo t tom elect rode could reflect the infrared irradiat ion. The vo ltage responsivity w as increased and
the thermal fluctuat ion no ise of the pyroelect ric element w as decreased significant ly. The experimental results indi2 cated the specific detect ivity of PCL T?P (VDF2T rFE) pyroelect ric senso rs based on PET film subst rate reached 314×107 cmHz1?2 W - 1,mo re 2 o rders ofmagnitude h igher than that of the senso rs on bulk silicon subst rate fo rmed under the same condit ions.
Key words: pyroelect ric senso r; p last ic film subst rate; compo site film; PCL T?P (VDF2T rFE)