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標簽 > UnitedSiC
UnitedSiC便成為一家無晶圓廠公司，將資源集中在產品設計、研發和客戶支持上，在行業發展趨勢的帶領下，公司快速、有效地穩步發展。
UnitedSiC SiC FET用戶指南
UnitedSiC FET-Jet計算器成為更好的器件選擇工具
UnitedSiC FET-Jet計算器讓為功率設計選擇SiC FET和SiC肖特基二極管變得輕而易舉。設計工程師只需：
電動車是車輪上的數據中心，具有工業規模的電動機控制（圖1），它的可行性取決于牽引逆變器和充電電路的效率。效率每提高一個百
通過收購 SiC 功率半導體公司 UnitedSiC，Qorvo 已將其影響力擴展到快速增長的電動汽車 (EV)、工業電
UnitedSiC提供七個采用七引腳設計的新750V SiC FET
許多人選擇“七”這個數字是因為它的“幸運”屬性，而UnitedSiC選擇它則當然是因為七個引腳非常適合D2PAK半導體封
UnitedSiC（現為Qorvo）擴展了其突破性的第4代 SiC FET產品組合, 通過采用TO-247-4引腳封裝的
UnitedSiC（現名Qorvo）擴充了其1200V產品系列，將其突破性的第四代SiC FET技術推廣到電壓更高的應用
2020年 750V第四代SiC FET 誕生時，它與650V第三代器件的比較結果令人吃驚，以 6毫歐 器件為例，品質因
2022-05-23 標簽： UnitedSiC 1259 0
UnitedSiC宣布推出行業先進的高性能 1200 V 第四代 SiC FET
中國北京 -?2022 年 5 月 17 日 – 移動應用、基礎設施與航空航天、國防應用中 RF 解決方案的領先供應商
隨著我們的產品接近邊沿速率超快的理想半導體開關，電壓過沖和振鈴開始成為問題。適用于SiC FET的簡單RC緩沖電路可以解
The promise of SiC
In 1999， a small team of researchers at Rutgers University founded UnitedSiC. This was in the days when Silicon Carbide （SiC） technology was still in its infancy， and devices were being manufactured in the research lab on thumbnail sized pieces of SiC. This team developed many of the basic SiC process techniques used with the
company‘s external foundry partners today.
In 2009， a group of successful entrepreneurs who believed in the promise of wide band-gap materials， and SiC in particular acquired the company. Even then， the overall sic market was relatively small， but it presented an excellent investment
opportunity based on the projected market for SiC-based devices. In addition，larger scale manufacturing techniques gave the potential to drive down the higher costs associated with a SiC solution.
In 2010， UnitedSiC built a pilot production cleanroom near Princeton NJ， to enhance the SiC processes to the stage where they could be directly installed in a
commercial foundry. At this point， UnitedSiC became a fabless company， focusing their resources on product design， R & D and customer support， employing an
already proven industry strategy that allowed for fast， efficient company growth. Growing SiC manufacturing capabilities In 2011， UnitedSiC processes were successully installed at a commercial foundry using the largest substrate （4 “） available at the time. The resulting products
delivered highly differentiated functionality， and improved power efficiency， based on a lower cost switch solution using the UnitedSiC core JFET technology. When coupled with an appropriately designed Si MOSFET， UnitedSiC was able to manufacture devices that were 1/2 the die size at 1200 V and less than 1/3 the die size at 650 V， compared to its nearest competitor. This not only delivered significantly improved device performance that helped customers achieve new levels of end system performance， but also helped drive company profitability. It is this technology that put UnitedSiC on the roadmap of the incumbent $1B Si Superjunction market.
The promise of SiC
In 1999， a small team of researchers at Rutgers University founded UnitedSiC. This was in the days when Silicon Carbide （SiC） technology was still in its infancy， and devices were being manufactured in the research lab on thumbnail sized pieces of SiC. This team developed many of the basic SiC process techniques used with the
company‘s external foundry partners today.
In 2009， a group of successful entrepreneurs who believed in the promise of wide band-gap materials， and SiC in particular acquired the company. Even then， the overall sic market was relatively small， but it presented an excellent investment
opportunity based on the projected market for SiC-based devices. In addition，larger scale manufacturing techniques gave the potential to drive down the higher costs associated with a SiC solution.
In 2010， UnitedSiC built a pilot production cleanroom near Princeton NJ， to enhance the SiC processes to the stage where they could be directly installed in a
commercial foundry. At this point， UnitedSiC became a fabless company， focusing their resources on product design， R & D and customer support， employing an
already proven industry strategy that allowed for fast， efficient company growth. Growing SiC manufacturing capabilities In 2011， UnitedSiC processes were successully installed at a commercial foundry using the largest substrate （4 “） available at the time. The resulting products
delivered highly differentiated functionality， and improved power efficiency， based on a lower cost switch solution using the UnitedSiC core JFET technology. When coupled with an appropriately designed Si MOSFET， UnitedSiC was able to manufacture devices that were 1/2 the die size at 1200 V and less than 1/3 the die size at 650 V， compared to its nearest competitor. This not only delivered significantly improved device performance that helped customers achieve new levels of end system performance， but also helped drive company profitability. It is this technology that put UnitedSiC on the roadmap of the incumbent $1B Si Superjunction market.
電動車是車輪上的數據中心，具有工業規模的電動機控制（圖1），它的可行性取決于牽引逆變器和充電電路的效率。效率每提高一個百分點都能促進散熱需求降低、重量減...
2020年 750V第四代SiC FET 誕生時，它與650V第三代器件的比較結果令人吃驚，以 6毫歐 器件為例，品質因數RDS?A降了近一半，由于體二...
2022-05-23 標簽：UnitedSiC 1259 0
隨著我們的產品接近邊沿速率超快的理想半導體開關，電壓過沖和振鈴開始成為問題。適用于SiC FET的簡單RC緩沖電路可以解決這些問題，并帶來更高的效率增益。
UnitedSiC FET-Jet計算器成為更好的器件選擇工具
UnitedSiC FET-Jet計算器讓為功率設計選擇SiC FET和SiC肖特基二極管變得輕而易舉。設計工程師只需：
通過收購 SiC 功率半導體公司 UnitedSiC，Qorvo 已將其影響力擴展到快速增長的電動汽車 (EV)、工業電源控制、可再生能源和數據中心電源...
UnitedSiC提供七個采用七引腳設計的新750V SiC FET
許多人選擇“七”這個數字是因為它的“幸運”屬性，而UnitedSiC選擇它則當然是因為七個引腳非常適合D2PAK半導體封裝。
UnitedSiC（現為Qorvo）擴展了其突破性的第4代 SiC FET產品組合, 通過采用TO-247-4引腳封裝的750V/6mOhm SiC F...
UnitedSiC（現名Qorvo）擴充了其1200V產品系列，將其突破性的第四代SiC FET技術推廣到電壓更高的應用中。
UnitedSiC宣布推出行業先進的高性能 1200 V 第四代 SiC FET
中國北京 -?2022 年 5 月 17 日 – 移動應用、基礎設施與航空航天、國防應用中 RF 解決方案的領先供應商 Qorvo?（納斯達克代碼：QR...
Qorvo?收購領先的碳化硅功率半導體供應商UnitedSiC公司
Qorvo今天宣布，已收購位于新澤西州普林斯頓領先碳化硅（SiC）功率半導體供應商UnitedSiC公司。
UnitedSiC的第4代SiC FET采用了“共源共柵”拓撲結構，其內部集成了一個SiC JFET并將之與一個硅MOSFET封裝在一起。
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